Weebit Nano is pioneering discrete ReRAM chip development to address the growing demand for high-capacity, standalone non-volatile memory solutions. These discrete chips are strategically designed to accommodate the integration of advanced storage capabilities in a variety of consumer and industrial devices. The discrete ReRAM technology leverages a unique combination of Weebit's oxide-based resistive memory and a two-terminal selector architecture to deliver highly scalable, high-density memory solutions suitable for modern applications.
The design of discrete ReRAM chips focuses on maximizing storage capabilities using a Back-End-Of-Line (BEOL) process. This design choice is crucial as it allows for smaller bit cells, facilitating greater densities than traditional flash memory. Furthermore, the ReRAM’s architecture supports transformative innovations like 3D stacking, which is essential for achieving significant capacity in tight form factors, a benefit particularly pertinent for mobile and data-intensive applications.
Additionally, these discrete memory solutions excel in power efficiency and endurance, attributes critical for both embedded and external memory segments. The technology ensures that memory access times are shortened, resulting in faster data operations and reduced power draw across a range of temperatures and environmental conditions. With the development of discrete ReRAM, Weebit Nano is positioned to meet the performance demands of storage-hungry applications through flexible and adaptive solutions that promise both immediate and future scalability.
