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All IPs > GS-065-008-1-L 650V Enhanced GaN Transistor

GS-065-008-1-L 650V Enhanced GaN Transistor

From GaN Systems

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Description

Part of the high voltage series, the GS-065-008-1-L is tailored for applications that demand high voltage operation without compromising efficiency or compactness. With an RDS(on) of 225mΩ, it supports 8A, making it a reliable choice for high-performance operations. Its advantageous thermal characteristics are realized through a bottom-side cooling mechanism, pivotal for consistent system performance.

It leverages GaN technology to achieve significant reductions in power loss, which is critical in applications such as inverters and power supply networks where every watt saved translates to cost savings and sustainability. This device offers a significant contribution to reducing the environmental impact of power conversion systems.

The GS-065-008-1-L significantly complements applications within the renewable energy and automotive sectors, supporting sustainable technological progress by offering the high efficiency and reliability that modern systems demand while being lightweight and easily integrated into existing infrastructures.

Tech Specs
Class Value
RDS(on) 225 mΩ
QG 1.5 nC
Dimensions 5.0 x 6.0 x 0.85 mm
Availability All Countries & Regions
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