The GS61004B is a sophisticated enhancement mode GaN transistor designed to provide high efficiency and superior performance. With its 100 V series configuration, this component features a maximum current capacity of 38 A and a low on-resistance of 16 mΩ. It offers a notable charge management with a total gate charge of 3.3 nC. The GS61004B is compact, with dimensions of 4.6 x 4.4 x 0.51 mm, making it suitable for high-density power applications. Cooling is efficiently managed with a bottom-side cooling package, enhancing thermal performance and system reliability.
This GaN transistor is engineered to provide enhanced switching speeds and reduced energy losses, making it ideal for powering next-generation consumer electronics, including fast chargers and audio equipment. Its cutting-edge design supports high-frequency operation, which reduces system size and weight, leading to significant energy savings and performance improvements.
The GS61004B is part of GaN Systems' commitment to delivering components that outperform traditional silicon-based devices, particularly in converting and controlling electricity more efficiently. The transistor is pivotal in elevating the efficiency of power systems across consumer electronics, data centers, automotive, and more, aligning with the global push towards sustainable and environmentally friendly technologies.
