I-fuse® technology leads the way in non-volatile memory with a non-explosive programming method that avoids thermal disruptions commonly associated with other memory systems. It reduces the footprint by a factor of ten compared to eFuse and can be implemented without extra masks or process steps across multiple foundries. With low programming voltage capabilities (1.1V/1.8V) and high data security features, it provides reliability tested up to 300°C, making it suitable for harsh environmental conditions, especially in automotive applications.
