LEE Flash G1, Floadia's innovative Sony's Non-Oxide Semiconductor (SONOS) Flash IP, is a cost-efficient memory solution targeted at applications requiring medium memory capacity, reaching up to several hundred kilobytes. It's designed to accommodate automotive-grade specifications, maintaining quality under high temperatures and ensuring long data retention. G1's architecture allows for the seamless reuse of existing CMOS platform designs without altering logic characteristics, thereby reducing development overhead.
With a focus on reducing chip costs, LEE Flash G1 minimizes testing and baking times and requires only 2-3 additional masks. Its low power consumption during program and erase cycles is particularly beneficial for power-sensitive applications. The IP is especially adept at scenarios demanding robust performance under extreme conditions, offering significant advantages in automotive and sensor-driven applications.
Manufacturers benefit from the architecture's compatibility with industry-standard CMOS processes, ensuring that the integration of G1 does not involve extensive modifications or added costs. This makes LEE Flash G1 a versatile and economically viable choice for a broad range of industry applications where eFlash technology can be effectively employed.
