All IPs > Memory Controller & PHY > NAND Flash
NAND Flash Memory Controllers and PHY semiconductor IPs are crucial components in modern electronic devices, providing efficient management and interfacing for NAND flash memory. NAND flash is a type of non-volatile storage technology that retains data even without power, making it invaluable in applications ranging from consumer electronics to industrial systems. The core function of memory controllers in this context is to facilitate communication between the NAND flash memory and the device's processor, optimizing performance and reliability.
In the product offerings under this category, you will find a variety of controllers with features such as error correction code (ECC) capabilities, wear leveling algorithms, and high-speed data transfer interfaces. These features are essential for ensuring data integrity and enhancing the lifespan of NAND flash memory in devices like smartphones, laptops, and data centers. PHY semiconductor IPs also play a vital role, as they define the physical layer protocols necessary for robust communication between memory cells and the controller.
The integration of NAND Flash Memory Controller and PHY semiconductor IPs can significantly enhance device performance, enabling higher data throughput and lower latency. By managing tasks such as reading, writing, and error correction, these IPs allow devices to handle large volumes of data efficiently, a critical demand in today’s data-driven market. This makes NAND flash technology, supported by these controllers and PHYs, ideal for high-performance computing applications and storage solutions.
At Silicon Hub, we offer a comprehensive array of NAND Flash Memory Controllers and PHY semiconductor IPs designed to meet the diverse needs of industries relying on robust data storage solutions. Our state-of-the-art IPs are developed to integrate seamlessly into various electronic systems, providing developers with flexible and scalable solutions that cater to both current technological demands and future advancements.
The Aries fgOTN processor family is engineered according to the ITU-T G.709.20 fgOTN standard. This line of processors handles a variety of signals, including E1/T1, FE/GE, and STM1/STM4, effectively monitoring and managing alarms and performance metrics. Aries processors excel at fine-grain traffic aggregation, efficiently channeling fgODUflex traffic across OTN lines to support Ethernet, SDH, PDH client services. Their capacity to map signals to fgODUflex containers, which are then multiplexed into higher order OTN signals, demonstrates their versatility and efficiency. By allowing cascaded configurations with other Aries devices or Apodis processors, Aries products optimize traffic routes through OTN infrastructures, positioning them as essential components in optical networking and next-generation access scenarios.
Ilika’s Stereax batteries are thin-film solid-state batteries designed for small-scale, lightweight applications like active medical implants and industrial IoT sensors. The Stereax line is innovatively engineered to be free of liquid or polymer elements, thereby reducing risks of leakage and enhancing their operational safety. These batteries provide longevity with the capability of thousands of charge cycles and have a low power leakage characteristic in nanoamperes, making them ideal for devices needing minimal power over extended periods. In a unique collaboration with Cirtec Medical, Stereax batteries are slated for commercial production and integration in various MedTech applications. The Stereax M300, a prominent member of this battery family, boasts specifications like a size of just 3.6mm x 5.6mm, a 1.1mm thickness, and a capacity of 300 µAh. This variant specifically enjoys a pulse power capability of 12 mW and a cycle life extending beyond 1000 cycles at 50% depth of discharge. Perfect for applications such as neurostimulation, cardiac sensing, and other smart medical technologies, Stereax batteries symbolize the intersection of innovative design and operational practicality, aiming to empower the next generation of medical devices and IoT solutions with reliable, miniature energy resources.
Toggle MRAM technology represents one of Everspin’s pioneering contributions to memory storage. This innovative system is engineered to deliver consistent performance with non-volatile memory capabilities, enabling persistent data retention without reliance on power. Toggle MRAM functions by storing data through magnetic states, ensuring remarkable data integrity and endurance even under strenuous conditions. Emphasizing simplicity and efficiency, the Toggle MRAM occupies a prominent space in applications requiring rapid read and write cycles. It excels in environments where durability is crucial, as it provides an unmatched lifecycle with enduring data storage capabilities. This technology proves particularly beneficial for mission-critical applications where data loss is not an option. Everspin’s Toggle MRAM is designed to seamlessly integrate with various systems, offering compatibility and flexibility to a broad range of industries, including aerospace and automotive. Its unique attributes such as fast access times and prolonged endurance make it a preferred choice for systems that require robust data logging and secure data holding capabilities.
The EZiD211, also known as Oxford-2, is a leading-edge demodulator and modulator developed by EASii IC to facilitate advanced satellite communications. It embodies a sophisticated DVB-S2X wideband tuner capable of supporting LEO, MEO, and GEO satellites, integrating proprietary features like Beam Hopping, VLSNR, and Super Frame applications. With EZiD211 at the helm, satellite communications undergo a transformation in efficiency and capacity, addressing both current and future demands for fixed data infrastructures, mobility, IoT, and M2M applications. Its technological forefront facilitates seamless operations in varied European space programs, validated by its full production readiness. EZiD211's design offers a unique capability to manage complex satellite links, enhance performance, and ensure robust and reliable data transmission. EASii IC provides comprehensive support through evaluation boards and samples, allowing smooth integration and testing to meet evolving satellite communication standards.
CrossBar's ReRAM Memory is designed to redefine data storage with its high-density and energy-efficient characteristics. The memory solution can achieve terabyte-scale storage on-chip, significantly surpassing traditional flash memory solutions in both speed and power consumption. Offered in a 3D cross-point architecture, it is capable of providing high performance with minimal layout overhead. Engineered for next-generation applications, this ReRAM technology boasts a performance edge with 20ns read times and 12µs write capabilities, eliminating the usual erase latency. It is significantly faster than traditional NAND flash with its lightning-fast read and write speeds, making it suitable for real-time processing required by cutting-edge applications such as AI and IoT. Security is a key feature, offering tamper-resistant provisions for cryptographic key storage ensuring robust protection against data breaches. The memory solution leverages advanced technology to deliver energy savings of up to 5x compared to eFlash, and up to 40x when compared to BLE, positioning it as an ideal choice for mobile and low-power applications.
The Apodis family of Optical Transport Network processors adheres to ITU-T standards, offering a comprehensive suite for signal termination, processing, and multiplexing. Designed to handle both SONET/SDH and Ethernet client services, these processors map signals to Optical Transport Network (OTN), empowering versatile any-port, any-service configurations. Apodis processors are notable for their capacity to support up to 16 client ports and four 10G OTN line ports, delivering bandwidth scalability up to 40G, crucial for wireless backhaul and fronthaul deployments. With a robust, non-blocking OTN switching fabric, Apodis facilitates seamless client-to-line and line-to-line connections while optimally managing network bandwidth. This adaptability makes the Apodis processors an ideal choice for next-generation access networks and optical infrastructures.
The ReRAM IP Cores for Embedded Non-Volatile Memory are crafted to seamlessly integrate into microcontrollers (MCUs) and systems on chips (SOCs), addressing the enduring need for efficient and scalable storage. These IP cores leverage CrossBar's signature 3D ReRAM technology to provide unparalleled performance in both speed and density, tailored specifically for embedded systems. Designed to offer superior integration capabilities, this ReRAM technology reduces traditional bottlenecks witnessed with embedded flash memory solutions. It allows for rapid data access and storage, making it a superior choice for applications requiring frequent read/write operations. By offering robust tamper-resistance for secure key storage, these IP cores also add an additional layer of security critical for modern embedded systems. They enable cost-effective scalability and flexibility for manufacturers looking to enhance their products with cutting-edge memory technology.
TwinBit Gen-1 stands as a cutting-edge, logic-based non-volatile memory suitable for 180nm to 55nm process nodes. It prides itself on remarkable endurance, capable of performing over 10,000 programming cycles. This IP macro is designed for integration into CMOS logic processes without extra masking steps, easing the implementation in advanced technology nodes. The TwinBit Gen-1 series is well-adapted for a diverse range of applications, including IoT devices, microcontrollers, FPGAs, and ASICs with embedded NOR FLASH, offering memory sizes from 64 bits to 512K bits. It provides a high-density, small-area solution, which is particularly beneficial for applications requiring field-rewritable firmware or secure data storage. This memory technology ensures low-voltage and low-power operations, accommodating automotive industry standards through compliance with AEC-Q100. TwinBit Gen-1 includes built-in test circuits that allow for stress-free testing, ensuring reliability in diverse operating conditions. The technology also supports low-cost manufacturing and faster development turnaround times.
The Scorpion family of processors offers support for OSU containers as per the CCSA and IEEE standards, particularly the OSUflex standard. These processors accommodate various client-side signals, including E1/T1, FE/GE, and STM1/STM4, ensuring robust performance monitoring and optional Ethernet rate limitation. Scorpion processors can adeptly map these client signals to OSU or ODU containers, which are subsequently multiplexed to OTU-1 lines. Known for their flexibility and efficiency in handling diverse traffic types, Scorpion processors serve as foundational elements for advancements in access networks and optical service units, ensuring sustained performance in increasingly complex networking environments.
T-Head Semiconductor's Zhenyue 510 is a high-performance SSD controller tailored for enterprise-grade solid-state drives. This controller is intricately engineered to handle large-scale data processing with enhanced reliability and speed. It integrates innovative memory management techniques that maximize the effectiveness of storage solutions, thereby supporting modern data-driven applications in various industries. The Zhenyue 510 boasts advanced error correction mechanisms and efficient power mode management, which together ensure robust data integrity and energy efficiency. Its architecture allows for seamless integration with existing server infrastructures and supports an extensive set of storage interfaces, facilitating versatile deployment options for enterprise users. These features combine to deliver a balance of speed and dependability essential for sustaining the performance demands of high-end applications. With its focus on optimizing NAND performance, the Zhenyue 510 excels in sequencing large datasets, making it indispensable for workloads that thrive on quick data access and manipulation such as databases and real-time analytics. Its design underpins T-Head Semiconductor's mission to deliver components that not only meet but exceed the rigorous expectations of contemporary technology landscapes.
The LEE Flash G2 transcends traditional flash memory with its advanced features and innovative use of SONOS technology. Constructed to redefine the potential of non-volatile memory (NVM) systems, G2 stands out with its ability to perform read operations at standard VDD levels. By minimizing high voltage areas within the memory block, G2 enables seamless connectivity between memory cells and logic circuits, fostering the direct integration of NV-SRAM functionality within larger systems. This unique capability stems from G2's design, which integrates SONOS transistors with advanced switching elements to offer unprecedented functionality. The low programming current, in picometric amplitude, mirrors a fraction of what is required for floating-gate technologies, presenting designers with extensive flexibility in chip architecture. The extended feature set of G2 further elevates its value, particularly for applications needing rapid data transfer, such as MCU and SoC developments. G2's proprietary NV-SRAM design allows for efficient data transfer between SRAM and non-volatile memory, providing a robust solution for applications requiring swift power cycling without data loss. It eliminates the need for separate flash blocks and interconnect interfaces, thereby streamlining design processes and reducing material costs. This makes the G2 particularly suitable for high-performance embedded systems, facilitating quicker startups and power-responsive operations.
PermSRAM offers a flexible non-volatile memory solution designed for seamless integration with standard CMOS processes from 180nm to 28nm and potentially beyond. Its key features include one-time programmable and pseudo multi-time capabilities with a variety of memory configurations, ranging from 64 bits to 512K bits. Notably, PermSRAM incorporates a non-rewritable hardware safety lock, which is ideal for secure storage of codes. This memory macro caters to applications requiring high security and reliability such as security code storage and program management. It provides a robust solution with stable yield performance, making it an excellent choice for various security-sensitive uses. Furthermore, it eliminates the need for additional charging circuits by operating with a typical system board voltage of 5V, which leads to significant savings in silicon area. PermSRAM is structured to handle stress-free testing environments thanks to its built-in self-test circuits, maintaining efficiency even under demanding conditions. Its small silicon footprint and highly secure data storage make it suitable for a comprehensive set of applications, including analog trimming, gamma correction, and chip identification solutions.
TwinBit Gen-2 builds upon the foundation of its predecessor by supporting more advanced process nodes from 40nm to 22nm. Like the Gen-1 version, it is integrated into CMOS processes without necessitating additional masks or processing steps. This technology incorporates the novel Pch Schottky Non-Volatile Memory Cell, facilitating ultra-low-power operation. With the Gen-2, users gain access to a memory solution that handles both programming and erasing effectively through controlled hot carrier injection. This is achieved through intelligent cell bias manipulation, ensuring optimal performance. The process of hot-hole and hot-electron generation is finely distributed to maintain integrity during both program and erase operations. TwinBit Gen-2 is specifically advantageous for applications that demand ultra-low-power memory solutions. Its structure caters well to IoT and automotive applications where energy efficiency and reliability are paramount. Maintaining compactness and efficiency, this IP further enhances NSCore's portfolio in serving advanced technological requirements.
This Secondary/Slave PHY is intended for the memory side, offering high-speed, low-power protocols for data transfer. Following the JEDEC standards for LPDDR4/4X/5, it promotes efficient communication in various devices, especially AI and memory-intensive solutions. Although designed for TSMC's 7nm technology, its flexible architecture allows adaptation across different processes and memory configurations.
SuperFlash® Technology stands out as a cost-effective and high-performance solution, utilizing a proprietary split-gate Flash memory cell. It provides exceptional programmability for System-on-Chip (SoC) applications. Renowned for its reliability, SuperFlash® technology has been in production for over two decades, ensuring robust solutions for industries such as automotive, IoT, AI, and secure smart cards. Its impressive endurance, excellent data retention, and resilience to high temperatures make it an optimal choice for demanding environments. The architecture simplifies the design process while maintaining compatibility with standard silicon CMOS processes, extending scalability from larger nodes down to 110 nm technology. Its immunity to Stress-induced Leakage Current (SILC) enhances its reliability further. Available through flexible licensing options, SuperFlash® technology is employed by leading foundries and Integrated Device Manufacturers worldwide. This technology's availability spans a broad range of process nodes, from 28 nm to 500 nm, ensuring wide applicability in next-generation memory solutions. SuperFlash®'s impressive track record with over 90 billion units shipped underscores its innovation and reliability in the market.
The LEE Flash ZT is an innovative SONOS-based memory, crafted to deliver the benefits of multi-time programmable (MTP) non-volatile memory with minimal mask layers. Its zero additional masks design significantly lowers production costs while maximizing reliability, making it a truly cost-effective option for modern electronics systems. Focusing on providing tight Vt distributions and superior fault tolerance, the LEE Flash ZT utilizes electric charge retention technology inherently resistant to common defects. This guarantees excellent performance even after thousands of program and erase cycles, without degeneration in data integrity. Specifically optimized for applications where memory stability and endurance are critical, it delivers a robust solution that simplifies development and maintains the quality over extended use. The ZT's compatibility with existing CMOS processes without additional mask layers ensures it's an attractive option for a variety of implementations, further supported by its rapid integration capability. It's especially beneficial for systems seeking to minimize cost overheads and enhance value propositions without compromising on reliability or performance. Applications extend across diverse fields such as automotive controllers, consumer electronics, and industrial devices, bolstered by the memory's ability to efficiently handle numerous cycles without performance dips.
Non-Volatile Memory (NVM) Solutions are engineered for reliability and long-term data retention, crucial for devices requiring memory persistence even in power-off conditions. This technology underpins key storage applications across various sectors, including automotive and industrial markets. Tower Semiconductor's NVM solutions offer a variety of cell structures tailored to meet specific high-performance criteria, including low power consumption and high density. These attributes make them suitable for both consumer electronics and embedded systems where consistent memory access is vital. Enhanced by proprietary technologies like Y-Flash and e-Fuse, these NVM solutions provide customizable options for tailored memory designs, allowing for significant improvements in device functionality and security. The adaptability of these solutions ensures their relevance in an ever-growing technological landscape.
Flash solutions from PRSsemicon incorporate comprehensive design and verification IPS, constantly updated to harmonize with the latest specifications. These solutions support a breadth of flash memory and storage interface standards, ensuring top-tier performance in varied applications.\n\nThe suite includes UFS, eMMC, and SDIO configurations, providing a full spectrum of device and host functionalities, from SPI and XSPI controllers to serial and general flash controllers. Their IPs are engineered with a strong emphasis on backward compatibility, granting seamless adaptability across different generations of technology.\n\nThese flash solutions are designed to be integral to advanced data storage tasks, meeting the rigorous demands of accuracy and speed vital in environments like consumer electronics and data-intensive computing systems. By extending versatile memory interfacing options, PRSsemicon sets a standard in offering reliable, high-speed storage IPs.
The LEE Flash G1 is a cost-efficient SONOS flash memory solution crafted for exceptional low-power performance. Utilizing SONOS architecture, it overcomes common challenges faced by traditional split-gate memory technologies. With inherent charge retention capabilities, SONOS provides remarkable reliability through electric charge retention within a distributed charge trap, thereby ensuring minimal leakage. The G1's high endurance is maintained through Fowler-Nordheim tunneling, which ensures negligible oxide damage during programming and erasure, resulting in a long-lasting memory solution. Floadia's G1 memory cell is designed to integrate smoothly with standard CMOS processes, ensuring full compatibility with existing systems while necessitating few, if any, additional masks. This integration leads to decreased production costs and encourages efficient manufacturing workflows across various fabs. Featuring high-speed read operations with minimal energy consumption, the LEE Flash G1 addresses both cost concerns and technical demands, positioning it as a reliable choice for multiple applications. The G1's streamlined architecture means it's easy to adopt within semiconductor fab lines, using common materials that simplify the manufacturing process. This enhanced compatibility supports a diverse array of applications, including automotive MCUs, sensor controllers, and power management solutions. Moreover, the memory's rapid test cycles help minimize overhead in production time, making it an appealing choice for industries focused on quick turnaround times and reduced developmental expenses.
The LEE Fuse ZA features a zero additional mask design, focusing on anti-fuse one-time programmable (OTP) technology. This provides significant cost savings while guaranteeing high reliability and robust data retention. Tailored for applications requiring permanent data storage, LEE Fuse ZA excels in areas where security and durability are essential, making it the ideal choice for code storage, device configuration, and secure key management. Utilizing a modified SONOS architecture, the LEE Fuse ZA ensures the highest standards in data preservation, even under demanding conditions. The technology circumvents typical failure modes seen in alternative memory technologies by fortifying the integrity of stored data against environmental changes and prolonged usage. This robustness extends the life expectancy of devices, particularly in harsh operating environments, without compromising on performance. Moreover, the LEE Fuse ZA's easy adaptability to standard manufacturing processes without the need for specialized materials expedites its inclusion in a variety of electronic systems. With applications ranging from smart card manufacturing to advanced motor control, its attributes make it an essential component for modern embedded systems in need of secure, reliable one-time programmable memories.
The Orion MFH IP Cores are designed for optimal performance in 4G mobile fronthaul networks, compliant with the ITU-T specifications for CPRI signal multiplexing. They adeptly handle various CPRI options, ranging from 2.4576 Gbps to 12.16512 Gbps, ensuring high compatibility and performance. Featuring both muxponder and transponder configurations, Orion cores facilitate the efficient mapping and transport of CPRI signals via Optical Transport Network infrastructures, ideal for modern telecommunications frameworks. Their advanced capabilities enable telecommunications providers to enhance their network reliability and service delivery, adapting seamlessly to different fronthaul scenarios.
CrossBar's ReRAM IP Cores for High-Density Data Storage are tailored to enhance the memory capacity of various devices beyond current possibilities. These cores are designed with CrossBar's advanced ReRAM architecture which enables stacking technology to achieve ultra-dense data storage solutions. This level of memory sophistication is ideal for applications requiring massive data archiving and real-time data analytics, delivering energy-efficient storage at a fraction of the power needed by traditional HDD or SSD solutions. The ReRAM architecture provides rapid read/write cycles, catering to applications demanding high throughput and low latency. Incorporating CrossBar’s secure storage capability, this core ensures data integrity and security are maintained without sacrificing performance. It is an optimal choice for data-driven sectors striving to manage vast pools of information rapidly and effectively, setting a benchmark for future storage solutions.
ReRAM as FTP/OTP Memory represents a leap in security for storing sensitive data reliably. The technology ensures a one-time programmable capacity, ideal for creating secure lock-in memory architectures where data permanence is paramount. Engineered to replace traditional OTP solutions, CrossBar's ReRAM technology provides the benefits of a non-volatile memory system with ease of integration into existing processes. It supports industries where secure data handling and retention are critical, offering a cost-effective and reliable solution. This memory type is particularly useful for applications involving digital rights management, personalization of consumer electronics, and where anti-fraud measures are crucial. The integration of tamper-resistant storage makes it highly viable for advanced security systems.
NAND Flash solutions from Chuangfeixin Technologies are designed to provide substantial storage capacity with rapid read/write speeds. This makes them especially suitable for large-scale data storage needs, offering optimal performance for continuous data applications. These solutions are engineered with a focus on cost-effectiveness and high storage density, delivering superior write and erase speeds. With support for extensive storage capacities and the ability to accommodate ECC operations for error correction, these NAND products cater to industrial-grade requirements, offering reliability and efficiency crucial for modern circuit designs. The advanced process technology ensures the NAND flash delivers enhanced endurance and energy efficiency, making it a preferred choice for both consumer and industrial electronics.
Chuangfeixin Technologies' OTP (One-Time Programmable) solutions provide a unique approach to secure data storage. Once programmed, the data within these OTP devices is immutable, providing a robust layer of security ideal for protecting intellectual property and sensitive information within integrated circuits or logic gates. These solutions are particularly advantageous in embedded applications, where they can safeguard firmware and configuration data against unauthorized access or alteration. The company offers versatile OTP products compatible with various CMOS processes, ensuring easy integration without additional processing steps, thus reducing development costs. The long data retention of over 100 years under extreme conditions further underscores the reliability of these OTP modules in demanding applications.
Eureka Technology's NAND Flash Memory Controller is integral for managing NAND flash memory operations, offering efficient handling of read, write, and erase functions. This controller is pivotal for applications needing reliable and robust data storage solutions, from mobile devices to enterprise servers. The controller is designed to optimize flash memory cycles, extending the lifespan of storage components. It incorporates sophisticated algorithms for error correction and wear leveling, ensuring data integrity and prolonging device endurance even in heavily-used environments. Compatible with various NAND flash configurations, this controller offers flexible interface options, adapting to specific application requirements. Its architecture supports scalability and future-proofing, allowing integration into both current and next-generation products with ease.
NOR Flash technology, provided by Chuangfeixin Technologies, is designed to meet the needs of applications requiring high reliability and performance. Utilizing the SPI interface, it supports both serial and parallel modes with Dual and Quad I/O options, achieving frequencies up to 108MHz for efficient execution and data storage. Its robust architecture ensures data retention with excellent thermal stability, making it ideal for applications in automotive and industrial sectors. The flash offers high-speed access, ensuring rapid random access to memory arrays from any location, facilitated through its XIP (Execute-In-Place) capabilities. This enhances its suitability for environments requiring dependable and fast data processing, positioning it as an integral component in high-demand computing systems.
The S9 microSD and SD Controller is crafted to address the stringent demands of industrial environments, offering both robustness and flexibility. This controller is specifically tailored for SD-based NAND flash storage applications, which include microSD and SD cards. It is also equipped with a security variant designed to meet additional security requirements in sensitive applications. Providing support for the latest SD interfaces up to the SD 7.1 standard, the S9 ensures compatibility and high performance. The controller is enriched with the comprehensive hyMap 0ae firmware, which facilitates customer-specific firmware extensions, delivering a turnkey solution for high-endurance and reliable flash memory applications. This controller is suitable for a variety of industrial applications, from data logging in harsh environments to secure data storage in security-sensitive fields. It provides exceptional reliability and adaptability, making it an optimal choice for systems requiring high-performance flash memory solutions that ensure data integrity and resilience.
The SiC Schottky Diode from Nexperia is a powerful semiconductor component offering remarkable efficiency and fast switching capabilities. Engineered using Silicon Carbide technology, this diode is ideal for applications that require superior performance in high-frequency operations. Its inherent advantages include low forward voltage drop and minimal reverse recovery losses, which are essential for energy-efficient power electronics. This diode excels in high-pressure environments, supporting applications with stringent power management requirements. The SiC Schottky Diode's ability to operate at higher temperatures compared to silicon diodes makes it an excellent choice for automotive and industrial applications where thermal stability is crucial. This component addresses the growing demand for components capable of performing in advanced and robust electronic systems. Versatile in its application, the SiC Schottky Diode is particularly beneficial in systems where minimizing power loss is critical. It finds extensive use in power factor correction circuits, solar inverters, and industrial power supplies. Nexperia's dedication to high-quality and efficient designs is clearly exemplified in this product, which is crafted to enhance system performance and reliability.
The SiC Schottky Diode from Nexperia is a powerful semiconductor component offering remarkable efficiency and fast switching capabilities. Engineered using Silicon Carbide technology, this diode is ideal for applications that require superior performance in high-frequency operations. Its inherent advantages include low forward voltage drop and minimal reverse recovery losses, which are essential for energy-efficient power electronics. This diode excels in high-pressure environments, supporting applications with stringent power management requirements. The SiC Schottky Diode's ability to operate at higher temperatures compared to silicon diodes makes it an excellent choice for automotive and industrial applications where thermal stability is crucial. This component addresses the growing demand for components capable of performing in advanced and robust electronic systems. Versatile in its application, the SiC Schottky Diode is particularly beneficial in systems where minimizing power loss is critical. It finds extensive use in power factor correction circuits, solar inverters, and industrial power supplies. Nexperia's dedication to high-quality and efficient designs is clearly exemplified in this product, which is crafted to enhance system performance and reliability.
Weebit Nano's Embedded ReRAM brings transformative benefits to memory enhancement for semiconductor designs. This ReRAM technology offers superior speed and power consumption reductions compared to traditional NVMs, making it highly suitable for advanced applications like IoT and automotive systems. The embedded technology integrates seamlessly into existing semiconductor infrastructure, allowing for easier transitions and improved performance. With its robust data retention and high endurance, this ReRAM enhances device longevity and reliability, catering to the demanding environments of modern electronics while maintaining low energy requirements. The Embedded ReRAM technology by Weebit Nano is designed with scalability in mind, addressing the constraints seen with conventional memories at sub-28nm levels. Its innovative architecture enables faster operation speeds and maintains performance at extreme temperatures, ensuring robust operation across varied applications. This makes it ideal for systems requiring frequent read/write operations, offering a balance between efficiency and power usage that is necessary for future-forward technology systems. By positioning itself as a leader in ReRAM technology, Weebit Nano caters to industries looking to optimize semiconductor performance with next-generation solutions. The embedded ReRAM is not just a memory upgrade; it's an essential enabler for achieving high-performance results across a broad spectrum of use cases, from industrial control systems to advanced consumer electronics.
The LPDDR5 PHY by Green Mountain Semiconductor is a high-speed, low-power memory-side interface. It supports the latest JEDEC LPDDR5 standards, facilitating efficient data communication between memory products and AI processors. Initially developed for 7nm process technology at TSMC, the PHY is versatile, supporting adaptation to other logical processes. This adaptability promotes broad utility across various memory technologies, from traditional DRAM and SRAM to cutting-edge non-volatile memories.
Green Mountain Semiconductor introduces its LPDDR5X PHY, designed to meet the demanding standards of JEDEC for high-performance, low-power data transfers. This memory-side PHY can adhere to a variety of memory types beyond the LPDDR5X standard, making it suitable for both established and evolving memory technologies such as DRAM and SRAM. Initially configured for TSMC's 7nm technology, its design is adaptable to different processes to suit a broad range of device requirements.
LogicFlash Pro® eFlash is an elite embedded flash memory solution tailored for robust applications that demand high-density memory with superior performance characteristics. It stands out in an industry where speed, reliability, and capacity are paramount, offering advanced capabilities for storing and accessing information rapidly and securely. This eFlash technology is developed as a low-power solution, aligning with requirements for modern, energy-efficient devices, which are a staple in consumer electronics, industrial applications, and automotive sectors. Its integration into system-on-chip (SoC) designs enhances the device's overall performance and reliability, ensuring seamless operation even under the varying demands of complex processing environments. LogicFlash Pro® eFlash supports swift data retrieval and storage, which is critical for applications that require immediate access to vast data sets. Also, its compatibility with leading industry protocols makes it a versatile choice in the evolving landscape of memory solutions, offering developers the flexibility necessary to innovate and push the boundaries of technology.
NAND memory subassemblies are essential components for various digital devices like flash drives and MP3 players. This non-volatile memory type offers the ability to store significant amounts of data due to its compact size, energy efficiency, and reliability. Being smaller and more durable than traditional hard drives, NAND memory is preferred for portable electronics. NAND memory is prized for its ability to be erased and rewritten many times without losing data integrity, making it ideal for devices like USB drives, where data storage and quick access are crucial. The different form factors in which NAND can be packaged, such as MO-300, 2.5 inches, or M.2 modules, provide flexibility for diverse applications. This memory type supports interfaces like SATA, PCIe NVMe GEN 3, and PCIe NVMe GEN 4, allowing for high-speed data transfer. This feature makes it suitable for client, industrial, and consumer markets, ensuring that a wide range of devices can benefit from its capabilities.
The Column A/D Converter for Image Sensors is a specialized IP designed to facilitate high-performance analog-to-digital conversion within CMOS image sensors. Utilizing techniques like Single-Slope and "Warp & Walk" algorithms, this converter achieves precise digitization of analog input, ensuring high-resolution and high-speed performance. It is particularly useful in applications demanding rapid imaging such as digital cameras and surveillance systems. This IP supports up to 12-bit conversion accuracy, allowing it to handle high-frequency analog signals with exceptional fidelity. Its design incorporates innovative approaches to error minimization and noise reduction, such as the Fine Calibration Technique, which helps maintain integrity in signal processing. The converter's sophisticated architecture enables it to perform at low power, making it highly suitable for battery-powered imaging devices. Engineered with scalability in mind, the Column A/D Converter IP can be easily integrated into manufacturing processes, supporting various process nodes for maximum flexibility. The ability to maintain high-speed operation without compromising performance is essential in modern imaging applications, where fast and accurate data conversion is a prerequisite. By enhancing the imaging chain in electronics, the Column A/D Converter IP contributes significantly to improving image sensor capabilities, offering superior image quality and efficiency. Its adaptability ensures it meets the needs of complex imaging systems, providing a crucial component in the advancement of high-definition and high-speed imaging technologies.
Everspin’s xSPI product family offers a novel memory solution tailored for the evolving needs of the industrial IoT and embedded systems markets. Based on the expanded Serial Peripheral Interface, a cutting-edge JEDEC standard, the xSPI line is engineered to deliver remarkable read and write speeds with minimal latency. Operating at clock frequencies reaching up to 200 MHz, these devices utilize multiple I/O interfaces for enhanced data throughput, making them ideal for applications ranging from process control to automotive systems. Furthermore, the xSPI memory leverages Everspin’s proprietary STT MRAM technology to integrate high-speed SPI compatibility with the added benefit of persistent memory. These devices are crafted to replace legacy memory solutions like SRAM and NOR flash, providing an efficient, universal memory option that facilitates seamless integration into existing architectures. By offering a single power supply operation and remarkable data rates, the xSPI series is poised to support next-gen innovations in automation and industrial electronics.
The F9 CF PATA Flash Controller is engineered to handle the rigorous demands of parallel ATA (PATA) and Compact Flash (CF) storage environments. Known for its resilience, this controller is optimized for both industrial and embedded applications, ensuring data reliability and endurance. This controller supports a broad range of flash media, with error correction capabilities and wear leveling techniques that enhance longevity. It is particularly useful for applications that require consistent performance despite facing adverse conditions. Built with a focus on maintaining data integrity, the F9 incorporates cutting-edge flash management technologies. With its ability to seamlessly integrate with existing PATA and CF infrastructures, the F9 is an ideal solution for companies looking to upgrade or expand their data storage systems. It effectively combines robust performance with energy efficiency, making it suitable for a wide array of industrial applications.
Description The SPD5 Hub Function IP has been developed to interface I3C/I2C Host Bus and it allows an isolation of local devices like Temperature Sensor(TS), from master host bus. This SPD5 has Two wire serial interface like SCL, SDA. Features • Compliance as per JEDEC’s JESD300-5 • Upto 12.5MHz speed supported • Bus Reset • SDA arbitration • Parity Check is enabled • Packet Error Check is supported (PEC) • Supported Switch from I2C to I3C Basic Mode and vice versa • Default Read address pointer Mode supported • Support SPD5 Hub write and read operations with or without PEC enabled • In-band Interrupt (IBI) • Support Write Protection for each block of NVM memory
The Serial Peripheral Interface MRAM by Everspin is tailored for those applications necessitating streamlined data flows within compact systems. Its use of the Serial Peripheral Interface standard allows for simplified connectivity and lower pin counts, advantageous in designs with stringent space and integration constraints. Renowned for its rapid data exchange capabilities, the SPI MRAM facilitates both read and write operations at rates that ensure system responsiveness and reliability. Additionally, its resilience to data loss amidst power disruptions further cements its utility in critical applications where data persistence is paramount. Beyond performance, Everspin’s SPI MRAM exhibits remarkable compatibility with various electronic designs, facilitating seamless integration with existing technological infrastructure. This positions it as an ideal choice for enterprises looking to enhance reliability and speed without sacrificing space or efficiency.
Everspin's Parallel Interface MRAM stands as a versatile solution for those industries seeking reliable and fast-performing memory technology. Designed with a focus on rapid data storage and retrieval, this MRAM variant ensures optimal performance, making it a fitting choice for varied high-demand applications. The architecture of the Parallel Interface MRAM allows for unconventionally fast data transactions by leveraging a multi-line interface that facilitates extensive parallel processing. This results in quicker execution times and enhanced system efficiency, crucial for applications in sectors like medical and industrial automation, where timely data handling is critical. Providing non-volatile data storage, this technology minimizes the risks of data loss during power outages, making it invaluable for systems where uptime is crucial. With its robust design, Everspin’s technology pledges extended endurance and consistent performance, solidifying its place as a trusted solution in memory storage technology for real-world applications.
The IPM-BCH focuses on ensuring data reliability through its robust encoder/decoder capabilities. Rooted in the principles of Bose–Chaudhuri–Hocquenghem (BCH) coding, this IP module is engineered to facilitate error correction in a wide range of storage applications. The IPM-BCH's design allows for full customization, enabling users to specify parameters that best suit their project requirements. Incorporating the IPM-BCH in storage systems enhances their ability to handle and correct errors, which is crucial for maintaining data integrity in high-capacity environments. It serves as an essential component for developers seeking to minimize data loss and improve system reliability. The flexibility of the IPM-BCH is one of its standout features. It can be tailored to support specific channel conditions, signal characteristics, and error correction schemes. This adaptability makes it a versatile choice for applications ranging from simple storage devices to complex enterprise systems, where precision and reliability are crucial.
Everspin's MRAM designed for radiation-hard markets is pivotal for applications in aerospace and defense sectors, where data integrity is crucial amidst high-radiation environments. This MRAM technology assures stability and reliability in conditions typical of outer space, offering trusted data storage and retrieval. With radiation-hardened properties, these MRAM solutions are crafted to withstand cosmic forces that could disrupt or damage conventional electronic components. This resilience ensures critical data remains intact and accessible, validating its use in satellite communications and space explorations where performance and dependability are non-negotiable. By coupling high endurance memory with radiation-resistant capabilities, Everspin’s MRAM for radiation-hard markets delivers an exceptional balance of performance and protection. It stands as a reliable choice for organizations operating in the most challenging environments, securing data integrity and longevity even in the harshest of conditions.
MEMTECH’s D-Series DDR5/4/3 Controller is meticulously crafted for high-performance environments, driving its stature as a leading controller for diverse DDR memory systems. Fitted with adept command scheduling and error-correcting capabilities, it excels in optimizing operational latency, bandwidth, and silicon area. Enabling multi-channel support and conforming to the latest industry protocols like DFI 5.0, the D-Series Controller thrives in various systems from data centers to consumer electronics. It introduces over 300 customizable options, allowing partners to fine-tune functionalities to meet distinct implementation scenarios. Designed to bolster processor capabilities, it ensures seamless data handling and precise communication between various components. The company's comprehensive support ecosystem backs the controller, promising effective integration and alignment with ever-evolving technological standards, assuring stakeholders of its long-term viability and functionality.
The IPM-UNFC, or Universal NAND Flash Controller, is a sophisticated solution that allows for the seamless management of flash devices. This controller supports compatibility with ONFI versions up to 4.2 and beyond, ensuring broad interoperability with various NAND flash devices. The IPM-UNFC is engineered to optimize device operations, providing advanced ECC and reliability features that enhance data integrity and system robustness. In the realm of storage applications, the IPM-UNFC plays a crucial role in managing the complexities of flash memory interfacing. Its architecture supports high data throughput and reduces latency, making it an ideal choice for both consumer electronics and industrial applications where performance and reliability are paramount. Furthermore, the IPM-UNFC is built with customization in mind, offering flexible configuration options to accommodate specific user requirements. This adaptability ensures it can be tailored to seamlessly integrate within diverse system architectures, providing users with an easy-to-deploy yet powerful storage solution.
Spin-transfer Torque MRAM (STT-MRAM) by Everspin is cutting-edge technology addressing the increasing need for scalable and high-speed memory solutions. Utilizing the phenomenon of spin-transfer torque, it revolutionizes magnetic state transitions within a magnetic tunnel junction, significantly reducing switching energy compared to traditional methods. STT-MRAM is built to offer high-density memory capabilities, along with prolonged data retention and excellent endurance, which are vital for data-heavy applications. It stands out in environments demanding energy-efficient yet powerful memory operations, making it perfect for enterprise storage systems and data centers looking for persistent memory solutions. This technology also extends its reach to applications across industrial IoT and embedded systems, combining the attributes of non-volatility, speed, and scalability. Everspin’s STT-MRAM is versatile, offering JEDEC-standard interfaces and expanded operational temperature ranges, allowing for scalable deployments in diverse industry sectors.
SLL's Modular PHY Type 01 Suite is a PVT aware, foundry and process agnostic, PHY for use with most single-ended LVCMOS protocols up to 400 MHz DDR. The PHY has a highly modular architecture that supports x1, x4, x8, and x16 data paths. Its has process-voltage-temperature (PVT) controls that are suitable for use in hard realtime systems (zero timing interference on PVT adjustments). The PHY includes a full standard cell library abstraction. The PHY also offers >1000 configurable options at compile time, enabling coarse grain capabilities such as pin-level deskew to be enabled/disabled, along with precise fine-grain control of mapping of RTL to gates through various data paths. It supports a range of protocols such as SPI, QSPI, xSPI, eMMC, .. and allows run-time configuration via an APB3 control port. It is designed to support easy place-and-route in a broad range of customer designs.
The D-Series DDR5/4/3 PHY from MEMTECH is an advanced memory interfacing solution designed to enhance systems demanding high data throughput and energy efficiency. Its robust architecture supports diverse memory modules, including RDIMMs and LRDIMMs, making it adaptable to various sectors such as high-performance computing, consumer electronics, and network systems. With operational capabilities reaching up to 6400 Mbps, this PHY is fashioned to deliver both speed and reliability. It offers 150+ customizable features that enable system developers to align specific attributes to their unique product requirements, fostering innovation and product differentiation in competitive markets. As a complete Physical Layer (PHY) solution, MEMTECH ensures that the D-Series DDR PHY maintains superior integration and functionality with standard DDR interfaces. This promotes a streamlined design process, accented by extensive design guides and post-integration support that guarantees product performance and success across different application environments.
LogicFlash® MTP represents a new echelon in multi-time programmable flash memory technology, offering superior adaptability and performance in diverse computing environments. Specially designed to meet the high demands of performance-oriented applications, LogicFlash® MTP ensures that data can be stored and retrieved efficiently, accommodating the needs of a broad spectrum of electronic devices. This technology is crafted to enhance energy conservation and prolong the life cycle of memory components, making it an ideal choice for devices aimed at sustainable energy consumption. Its integration into smart devices supports extended usage without compromising on speed and reliability, fulfilling the stringent standards of modern electronics. LogicFlash® MTP's flexible architecture and reliable data retention capabilities also make it suitable for various industrial applications, ranging from telecommunications to embedded systems. It provides a substantial advantage in developing electronic solutions that require frequent data updates while maintaining data integrity over numerous cycles.
The DDR solutions from KNiulink include advanced architecture and technology designed to deliver high performance and low power consumption solutions in the DDR3/4/5 and LPDDR2/3/4/4x/5 families. These IP cores are tailored to cope with the increasing demands of modern applications that require high bandwidth and strong data integrity. The DDR IP offerings encompass a wide range of possibilities for embedded systems and other demanding applications, ensuring efficiency and performance across various industries.
Join the world's most advanced semiconductor IP marketplace!
It's free, and you'll get all the tools you need to discover IP, meet vendors and manage your IP workflow!
No credit card or payment details required.
Join the world's most advanced AI-powered semiconductor IP marketplace!
It's free, and you'll get all the tools you need to advertise and discover semiconductor IP, keep up-to-date with the latest semiconductor news and more!
Plus we'll send you our free weekly report on the semiconductor industry and the latest IP launches!