All IPs > Memory Controller & PHY > NAND Flash
NAND Flash Memory Controllers and PHY semiconductor IPs are crucial components in modern electronic devices, providing efficient management and interfacing for NAND flash memory. NAND flash is a type of non-volatile storage technology that retains data even without power, making it invaluable in applications ranging from consumer electronics to industrial systems. The core function of memory controllers in this context is to facilitate communication between the NAND flash memory and the device's processor, optimizing performance and reliability.
In the product offerings under this category, you will find a variety of controllers with features such as error correction code (ECC) capabilities, wear leveling algorithms, and high-speed data transfer interfaces. These features are essential for ensuring data integrity and enhancing the lifespan of NAND flash memory in devices like smartphones, laptops, and data centers. PHY semiconductor IPs also play a vital role, as they define the physical layer protocols necessary for robust communication between memory cells and the controller.
The integration of NAND Flash Memory Controller and PHY semiconductor IPs can significantly enhance device performance, enabling higher data throughput and lower latency. By managing tasks such as reading, writing, and error correction, these IPs allow devices to handle large volumes of data efficiently, a critical demand in today’s data-driven market. This makes NAND flash technology, supported by these controllers and PHYs, ideal for high-performance computing applications and storage solutions.
At Silicon Hub, we offer a comprehensive array of NAND Flash Memory Controllers and PHY semiconductor IPs designed to meet the diverse needs of industries relying on robust data storage solutions. Our state-of-the-art IPs are developed to integrate seamlessly into various electronic systems, providing developers with flexible and scalable solutions that cater to both current technological demands and future advancements.
The Aries fgOTN processor family is engineered according to the ITU-T G.709.20 fgOTN standard. This line of processors handles a variety of signals, including E1/T1, FE/GE, and STM1/STM4, effectively monitoring and managing alarms and performance metrics. Aries processors excel at fine-grain traffic aggregation, efficiently channeling fgODUflex traffic across OTN lines to support Ethernet, SDH, PDH client services. Their capacity to map signals to fgODUflex containers, which are then multiplexed into higher order OTN signals, demonstrates their versatility and efficiency. By allowing cascaded configurations with other Aries devices or Apodis processors, Aries products optimize traffic routes through OTN infrastructures, positioning them as essential components in optical networking and next-generation access scenarios.
Nantero's NRAM Technology represents a groundbreaking shift in memory innovation, aimed at redefining performance expectations in electronics. Known for its ultrafast read and write speeds comparable to DRAM, yet nonvolatile like Flash, NRAM presents a unique advantage in the memory landscape. It achieves these feats while employing a simple structure that is conducive to 3D multilayering, promising extreme scalability in future applications. One of its flagship features is its environmental resilience, boasting the ability to withstand harsh conditions including temperatures up to 300°C, magnetic fields, and radiation. This makes NRAM highly suitable for applications in critical infrastructures, such as national electrical grids, where reliability is paramount. Beyond its robustness, NRAM is designed to have exceptionally low power consumption, operating with virtually zero standby power and eliminating the need for refresh or precharge cycles. As a future-ready technology, NRAM has immense potential for scalability below 5nm, setting the stage for eliminating older storage forms like SSDs and hard drives. Its high endurance capabilities ensure it performs an order of magnitude more cycles than traditional flash, making it not just an efficient choice, but a sustainable one, aligning with green technology goals. This pioneering technology redefines what is possible in memory solutions, paving the way for future innovations in electronic and industrial technologies.
As a memory-side interface for advanced DRAM applications, this LPDDR4/4X/5 Slave PHY enables effective data interaction for AI processing units and other ASICs. Designed to adhere to the JEDEC standards, this PHY ensures high bandwidth and reduced latency in data transmission. Its architecture is compatible with TSMC's 7nm technology yet also supports customization across various logic processes, making it flexible for numerous high-speed memory interfacing scenarios.
The Apodis family of Optical Transport Network processors adheres to ITU-T standards, offering a comprehensive suite for signal termination, processing, and multiplexing. Designed to handle both SONET/SDH and Ethernet client services, these processors map signals to Optical Transport Network (OTN), empowering versatile any-port, any-service configurations. Apodis processors are notable for their capacity to support up to 16 client ports and four 10G OTN line ports, delivering bandwidth scalability up to 40G, crucial for wireless backhaul and fronthaul deployments. With a robust, non-blocking OTN switching fabric, Apodis facilitates seamless client-to-line and line-to-line connections while optimally managing network bandwidth. This adaptability makes the Apodis processors an ideal choice for next-generation access networks and optical infrastructures.
TwinBit Gen-1 represents an advanced non-volatile memory solution that is embedded within logic-based semiconductor designs, adapting seamlessly to CMOS logic processes without necessitating additional masks or process steps. This IP supports a range of process nodes from 180nm to 55nm, demonstrating high endurance through over 10,000 program and erase cycles. The memory solution excels in flexibility and efficiency, providing a sizeable range of memory density from 64 bits to 512K bits. Particularly beneficial for applications like analog trimming, security key storage, and system switches for ASIC and ASSP, it helps reduce manufacturing costs while maintaining compatibility with modern semiconductors. TwinBit Gen-1's remarkable features also include low-voltage, low-power operations, complemented by an automotive grade under AEC-Q100 conditions. Additionally, this technology's built-in test circuits streamline stress-free test environments, ensuring its integration doesn't hamper production. Compared to other technologies such as eFuses, TwinBit Gen-1 saves silicon area and simplifies test procedures without sacrificing operational capacity. Its design is particularly poised for embedded applications needing secure reprogrammable memory.
The Zhenyue 510 SSD controller represents a breakthrough in enterprise-grade storage technology. This sophisticated controller is crafted to enhance SSD performance in demanding computing environments, offering speed and durability to enterprise data centers. It features state-of-the-art architectures tailored to meet the intense demands of continuous data inflows typical within server farms and cloud storage infrastructure. Combining advanced processing capabilities with custom algorithmic optimizations, the Zhenyue 510 delivers exceptional read and write cycles, ensuring high throughput and stable data handling. Its robust design not only manages high-capacity data storage efficiently but also ensures reliable data integrity through sophisticated error correction techniques and data management protocols. This SSD controller is designed with adaptability in mind, compatible with a wide range of NAND flash technologies, thus offering significant flexibility for various storage applications. Ideal for data-intensive tasks that require consistent performance, the Zhenyue 510 advances T-Head's position within the SSD industry by setting new standards for speed, efficiency, and dependability.
CodaCache optimizes system-on-chip (SoC) performance by reducing memory latency with its highly configurable shared cache. By enhancing data flow and improving power efficiency, CodaCache provides a notable advantage in handling the key challenges of SoC design such as performance, data access, and layout congestion. The product is engineered to support seamless integration and maximize the design's efficiency and throughput.
The LEE Flash G1 represents a cost-effective SONOS flash memory solution, offering high reliability through its unique charge retention mechanism which mitigates the risks associated with leaking charges. This IP is built on a robust framework that enhances endurance and stability even after substantial use cycles. The G1 architecture is optimized for ease of integration into existing manufacturing processes, using common materials to ensure compatibility and ease of scalability across a range of applications. This promotes short testing times and contributes to reduced overall production costs. In terms of functionality, the LEE Flash G1 utilizes Fowler-Nordheim tunneling for programming and erasure, a technique that ensures low power consumption and minimal oxide damage, thereby extending the life and reliability of the memory cells. It is designed for applications requiring embedded memory solutions with a focus on efficiency in data processing power and operational stability. Floadia's G1 flash memory is particularly adept at maintaining a stable threshold voltage (Vt) distribution, which enhances its performance under repeated use conditions. The strategic design and robust characteristics of the G1 make it a suitable choice for a wide array of electronics that demand durable and efficient storage capabilities. By ensuring minimal processing overhead and maximizing the potential for integration, the G1 stands as a testament to Floadia's commitment to pioneering durable and cost-effective memory solutions.
CrossBar's ReRAM technology offers a revolutionary approach to data storage and processing. This memory technology leverages a simplistic yet powerful structure that employs a top electrode, a switching medium, and a bottom electrode. Upon applying voltage across these electrodes, a filament forms within the switching material, allowing data to be stored in a stable, efficient manner. ReRAM's capability to withstand extreme temperature fluctuations, its impressive cycle endurance, and its data retention over years make it ideal for various robust applications. What sets ReRAM apart is its ability to integrate directly with CMOS processing, facilitating seamless adoption across various semiconductor processes. Its potential to form dense 3D structures for massive data storage on a single chip offers significant advantages in terms of space and power efficiency. The simple device structure allows for incredible simplicity in its integration, providing a scalable memory solution that enhances performance and reduces energy consumption. Additionally, the technology's versatility allows it to serve multiple non-volatile memory functions, including as few-time or one-time programmable (FTP/OTP) memory. It's particularly well-suited for security applications, using its physical structure for the generation of securely encrypted keys within devices. The potential applications for ReRAM span from consumer electronics to highly secure computing systems, marking a new era in memory technology.
The Flash Protection Series by PUFsecurity encompasses a robust suite of solutions designed to safeguard system-on-chip (SoC) components through PUF-based technology. Extending the protective boundary established by the Hardware Root of Trust and Crypto Coprocessor, these protections are applicable to various types of Flash memory, including embedded, NAND, and NOR. By enabling security measures such as component fingerprinting and integrated cryptographic protections, the series ensures that both the hardware and software assets within an SoC are shielded from unauthorized access and manipulation. This capability is crucial for upholding the integrity of embedded firmware and proprietary software, which, if compromised, could lead to significant security breaches. These solutions allow for the expansion of PUF security across an entire chip, ensuring that every layer of architecture, from the physical hardware to the software application, benefits from maximum protection. Through its capacity to integrate seamlessly with existing systems, the Flash Protection Series helps companies meet sophisticated security standards while reducing the risk of intellectual property theft and counterfeiting in high-stakes markets.
The Orion MFH IP Cores are designed for optimal performance in 4G mobile fronthaul networks, compliant with the ITU-T specifications for CPRI signal multiplexing. They adeptly handle various CPRI options, ranging from 2.4576 Gbps to 12.16512 Gbps, ensuring high compatibility and performance. Featuring both muxponder and transponder configurations, Orion cores facilitate the efficient mapping and transport of CPRI signals via Optical Transport Network infrastructures, ideal for modern telecommunications frameworks. Their advanced capabilities enable telecommunications providers to enhance their network reliability and service delivery, adapting seamlessly to different fronthaul scenarios.
Ubi.cloud is an innovative geolocation solution by Ubiscale designed for device and chipset makers. It fundamentally shifts power-draining GPS and Wi-Fi processes from devices to the cloud. This transition helps in significantly reducing the size and cost of the devices, while dramatically improving their power efficiency. The utilization of cloud-based processing allows for reduced hardware requirements, thereby enabling smaller device footprints and lower energy consumption rates. By focusing on minimizing the physical and energy demands on IoT devices, Ubi.cloud addresses major engineering challenges associated with Global Navigation Satellite System (GNSS). These challenges include managing the life-time of devices, miniaturization constraints due to limited battery capacity, and the integration of various hardware features. Additionally, the cost efficiencies gained from this cloud-centric processing alleviate budgetary pressures, making IoT deployment more economically viable. Ubi.cloud's innovative approach not only supports the creation of more sustainable and efficient IoT devices but also enhances the user's experience by enabling more reliable and robust tracking features. It sets a new benchmark in making IoT solutions more accessible and effective for a wide range of applications.
Floadia's LEE Flash G2 offers a groundbreaking approach beyond traditional flash memory technologies by serving as both a logic and non-volatile memory element. Its design integrates a SONOS transistor with additional switching transistors, facilitating direct interfacing between memory and logic circuits without isolation barriers. This integration significantly reduces power requirements and enhances circuit flexibility, allowing for innovative design approaches in silicon chip manufacturing. One of the hallmark features of the G2 is its use of a high-speed non-volatile SRAM (NV-SRAM), which drastically changes memory architecture by eliminating the need for separate flash memory sections and interconnection circuits. Data transfer between SRAM and flash is seamless, offering faster operational capabilities with reduced power consumption. This is achieved through the use of Fowler-Nordheim tunneling for efficient low-power operation during programming and erasure phases, ensuring the longevity and reliability of the memory storage. The G2 is particularly advantageous for microcontroller and SOC designs where non-volatile memory performance is critical. By supporting VDD level read operations, it simplifies power management while enhancing speed and reliability, contributing to improved system efficiencies and providing a flexible platform for various high-demand applications.
PermSRAM is a versatile non-volatile memory solution integrated into foundry standard CMOS platforms accommodating process nodes from 180nm to 22nm and beyond. This memory technology offers various functionalities, such as one-time programmable ROM and pseudo multi-time PROM, which feature a multi-page configuration spread across memory sizes from 64 bits to 512K bits. A notable aspect of PermSRAM is its non-rewritable hardware safety lock that ensures the secure storage of critical security codes. In addition to its security features, PermSRAM delivers high reliability and a stable yield, making it suitable for automotive applications that require data retention at temperatures exceeding 150 degrees Celsius. This memory type is designed for seamless integration with existing system infrastructures as it doesn't need additional read operation circuitry like charge pumps. Its built-in self-test circuit is pivotal for supporting stress-free testing environments, ensuring ease of implementation in various applications like DRM and HDMI decoding, security code storage, and program storage. The benefits of PermSRAM extend to a smaller silicon footprint, achieved through a tamper-resistant design mechanism that uses an invisible charge trap memory system. This compactness is complemented by a fully testable architecture using conventional equipment. PermSRAM beams with capabilities that cater significantly to secure and reliable memory demands, whether for market differentiation or meeting stringent automotive standards.
The Scorpion family of processors offers support for OSU containers as per the CCSA and IEEE standards, particularly the OSUflex standard. These processors accommodate various client-side signals, including E1/T1, FE/GE, and STM1/STM4, ensuring robust performance monitoring and optional Ethernet rate limitation. Scorpion processors can adeptly map these client signals to OSU or ODU containers, which are subsequently multiplexed to OTU-1 lines. Known for their flexibility and efficiency in handling diverse traffic types, Scorpion processors serve as foundational elements for advancements in access networks and optical service units, ensuring sustained performance in increasingly complex networking environments.
The EZiD211 DVB-S2X Demodulator/Modulator, also known as Oxford-2, is a state-of-the-art chipset developed for satellite communication applications. Targeted at handling Low Earth Orbit (LEO), Medium Earth Orbit (MEO), and Geostationary Earth Orbit (GEO) satellites, it offers enhanced features such as Beam Hopping and Very Low Signal-to-Noise Ratio (VLSNR) capability, essential for modern satellite infrastructures. The chipset integrates modulating and demodulating functions into a single package, allowing for significant improvements in data transfer efficiency and satellite operation flexibility. It supports both fixed data infrastructures and mobile connectivity solutions, positioning it well for a variety of satellite communication needs, including Internet of Things (IoT) and Machine-to-Machine (M2M) communications. The Oxford-2 chipset has been realized as part of collaborative European space programs, demonstrating capabilities in new satellite features and reinforcing EASii IC’s reputation in cutting-edge communication solutions. Designed for integration with industry-standard equipment, it offers robust performance across different satellite configurations, ensuring reliability and adaptability in dynamic satellite networks.
The LEE Flash ZT by Floadia introduces a zero additional mask multi-time programmable (MTP) flash memory solution, which focuses on reducing manufacturing complexity while enhancing flexibility and performance. This MTP technology employs a unique implementation that avoids the need for additional mask layers, thereby simplifying the fabrication process and cutting costs without compromising on memory capability or reliability. At the core of the ZT flash memory is the emphasis on efficiency in programming and data retention. The SONOS-based architecture of the ZT leverages a simpler process flow to achieve a balance between operational speed and durable memory performance. It uses a refined charge trapping mechanism to ensure stable data integrity over extensive use and numerous programming cycles, rendering it ideal for dynamic and versatile use cases in various technology fields. This memory solution is particularly suited for applications that require repeated programming and erasure while maintaining low operational power parameters. The focus on eliminating unnecessary processing steps makes the LEE Flash ZT a compelling choice for advanced semiconductor applications seeking economic and efficient non-volatile memory systems.
The U9 Flash Memory Controller is designed for embedded applications, providing robust storage management across various NAND flash storage solutions. This controller is adept at managing USB flash drives and is optimized for high endurance and reliability. It utilizes sophisticated error correction and wear leveling algorithms, ensuring that data integrity is maintained even in the most challenging operational environments. The U9's advanced management technologies make it an ideal choice for industries where data reliability and storage performance are critical.
The Non-Volatile Memory (NVM) Solutions provided by Tower Semiconductor are engineered to offer efficient data storage capabilities that maintain integrity even without power. These solutions are critical for applications where data persistence is paramount, such as in industrial automation and consumer electronics. NVM from Tower Semiconductor includes advanced memory technologies, such as EEPROM and flash memory, catering to different storage requirements. These technologies are designed for longevity and reliability, ensuring that data is consistently accessible and secure over extended periods and across various environmental conditions. Their incorporation of proprietary techniques enhances memory density and speed, addressing the needs of contemporary data-driven applications. NVM solutions from Tower Semiconductor are integral to systems requiring constant data availability, enabling efficient and durable memory management.
CrossBar's ReRAM IP Cores for Embedded NVM represent a leap forward in non-volatile memory technology for use in microcontrollers and System-on-Chip (SoC) devices. These IP cores are distinguished by their capacity for multi-time programming, making them a superb choice for applications where high-performance, low-latency memory is critical. The ReRAM technology meets the requirements for today's embedded systems by operating efficiently at advanced process nodes starting from 28nm down to below 10nm. The ReRAM IP Cores are known for their capability to handle large data storage and run efficient code execution while maintaining low energy consumption. This technology exceeds the performance of traditional flash memory, with superior endurance and retention capabilities, making it an excellent fit for demanding industrial, automotive, and high-frequency consumer electronics that call for reliable memory solutions. Furthermore, these cores are engineered to be robust, dealing efficiently with diverse environmental conditions, ensuring data integrity and security. The ReRAM's design also includes options for incorporating secure physical unclonable function (PUF) keys, further enhancing its suitability for secure computing applications. CrossBar's technology thus enables a new wave of intelligent, secure, and low-power electronic devices.
Floadia's LEE Fuse ZA is designed as a zero additional mask anti-fuse one-time programmable (OTP) memory technology. It provides a high-efficiency solution for applications that require permanent data storage combined with robust security features. By employing an anti-fuse mechanism, the LEE Fuse ZA ensures that data once written cannot be altered, thereby providing a safeguard against unauthorized modifications or data corruption. This IP's architecture benefits from a streamlined manufacturing approach that reduces the complexity of integration into current processes, supporting cost-effective production. The anti-fuse technology used in the Fuse ZA offers high data integrity and resistive to electrical and environmental disturbances, ensuring reliable performance even under challenging conditions. The Fuse ZA's optimal design for seamless embedding in a variety of chip types makes it suitable for a wide-range of applications, particularly those where security and tamper-proof data are pivotal. Its easy integration and the return on investment provided through reduced production overhead and enhanced security make it an advantageous component in modern semiconductor solutions.
TwinBit Gen-2 enhances the prior version by supporting more advanced process nodes, spanning from 40nm to 22nm and adapted for further processes. It retains the simplicity of integration found in Gen-1, with no requirement for additional process steps, masks, or auxiliary charges despite its sophistication and efficiency enhancements. This memory technology leverages a newly developed Pch Schottky Non-Volatile Memory Cell that optimizes power consumption for ultra-low-power operations. The tech allows controlled hot carrier injection by cell bias during the program/erase cycle, ensuring the retention and reliability of data throughout its lifecycle. TwinBit Gen-2 thus guarantees a heightened level of operational efficiency for modern electronic devices. Suitable for various memory applications demanding high security and low energy consumption, TwinBit Gen-2 is a valuable asset in fields like IoT and other high-volume consumer electronics requiring reprogrammable memory infrastructure. By achieving this balance, TwinBit Gen-2 establishes itself as a leading non-volatile memory solution in the evolving semiconductor market.
The D-Series DDR5/4/3 PHY from MEMTECH is engineered to handle high-performance DDR5, DDR4, and DDR3 SDRAM interfaces, supporting data rates up to 6400 Mbps. This physical layer interface solution is ideal for systems requiring robust memory management, such as servers and high-performance computing equipment. Integrating seamless support for registered and load reduced memory modules, the PHY module ensures efficient scalability across varying system demands. Its provision in the hard macro format as a GDSII file emphasizes its readiness for direct integration into silicon, facilitating accelerated deployment timelines.
The P-Series MRAM solution from MEMTECH is crafted to deliver exceptional endurance and data persistence under demanding conditions. Suitable for aerospace, industrial applications, and specialized solid-state drives, this solution offers seamless integration through enhanced timing controls and DFI 5.0 support. The MRAM-DDR3 and DDR4 systems provide integrated support for dynamic operating conditions with customizable configurations, ensuring resilient performance alongside optimized power consumption.
MEMTECH's D-Series DDR5/4/3 Controller is a premier memory controller optimized for latency, bandwidth, and area, ensuring compatibility with high-performance systems. The controller supports DDR5, DDR4, and DDR3, utilizing cutting-edge features to optimize command scheduling and management across varying workloads. Connectivity via the standard DFI 5.0 interface ensures seamless integration with the physical layer, while advanced features such as error-correcting code and quad-channel support enhance reliability in complex computing environments.
The S9 microSD and SD Controller is crafted to fulfill the demanding needs of industrial environments, offering both flexibility and enhanced security features. This controller facilitates reliable data storage on microSD and SD cards, making it highly suitable for applications requiring robust and secure storage solutions. It comes with the proprietary hyMap® firmware, providing a turnkey solution for industrial-grade flash memory systems. The S9's advanced features support high endurance and facilitate seamless integration with host systems compatible with the SD 7.1 interface, ensuring reliable and secure storage.
Focused on memory-side integration, the LPDDR5 PHY offers an advanced interface following JEDEC standards for high-speed data exchange. It is aligned with the latest trends in memory technology, supporting DRAM and SRAM applications while also accommodating emerging memory forms. This IP is optimized for low power use and high performance, especially in environments where efficiency is crucial. Developed with TSMC's 7nm node, it ensures adaptability to various logic processes.
Eureka Technology's NAND Flash Memory Controller is integral for managing NAND flash memory operations, offering efficient handling of read, write, and erase functions. This controller is pivotal for applications needing reliable and robust data storage solutions, from mobile devices to enterprise servers. The controller is designed to optimize flash memory cycles, extending the lifespan of storage components. It incorporates sophisticated algorithms for error correction and wear leveling, ensuring data integrity and prolonging device endurance even in heavily-used environments. Compatible with various NAND flash configurations, this controller offers flexible interface options, adapting to specific application requirements. Its architecture supports scalability and future-proofing, allowing integration into both current and next-generation products with ease.
The LPDDR5X PHY provides a robust solution for memory interfacing, implementing the JEDEC standards for high performance and low power consumption. Suitable for diverse applications, it ensures reliable data transfer across devices such as AI processors and in-memory systems. Although primarily designed for a 7nm fabrication process, it can be tailored to various other nodes to meet the needs of evolving memory technologies, including both volatile and non-volatile memories.
This LPDDR4/4X/5 PHY interface IP is crafted for memory-side applications, typically embedded within standard DRAM products. It serves as a highly adaptable interface, connecting various devices like AI coprocessors with memory products. The IP implements high-speed, low-power LPDDR4X and LPDDR5 protocols as per JEDEC standards, ensuring compatibility and performance. Designed primarily for the 7nm TSMC node, it has the flexibility to be adapted to other processes, enabling its use with a wide range of memory types, such as DRAM, SRAM, and emerging non-volatile memories.
The ONFI/Toggle NAND Flash Controller by Mobiveil is targeted for high performance in the enterprise storage arena. This controller enables efficient access to external NAND flash, harnessing the power of pipeline performance in modern NAND flash devices. It supports ONFI 5.2 and toggle interfaces with flexible addressing capabilities, facilitating high-speed data transactions for SSDs. Its architecture is highly adaptable, making it suitable for an array of storage applications necessitating robust data throughput and reliability.
NAND technology has revolutionized how data storage is approached by providing a non-volatile solution that is both fast and durable. Often found in flash drives, MP3 players, and digital cameras, NAND memory is favored for applications requiring swift data access and superior endurance. Its compact size and low power consumption allow it to be integrated directly into chips and devices, which is ideal for portable electronics. Furthermore, NAND can be erased and rewritten extensively without compromising its data retention capabilities, making it perfect for devices like USB drives that demand large data storage.
SuperFlash® Technology is built on a proprietary split-gate Flash memory cell that provides a balance of high performance and low power consumption. Introduced in the early 90s, this technology has proven its reliability through its simplicity and endurance. The scalable architecture offers compatibility with standard silicon CMOS, making it an optimal choice for embedded memory applications. With a simplified design that delivers high endurance and excellent data retention, SuperFlash® Technology is particularly beneficial for environments requiring reliability under high temperatures and low failure rates. The technology has been adopted widely by leading foundries and serves various sectors like automotive and IoT applications.
Targeting the new demands of data-heavy applications, CrossBar's ReRAM IP Cores for High-Density Data Storage deliver unparalleled performance for high-capacity memory applications. These IP cores are crafted to meet the rigorous requirements of storage-intensive environments such as data centers, mobile computing, and artificial intelligence systems, providing a high-density, low-latency memory solution that exceeds the capabilities of traditional storage technologies. The High-Density Data Storage Cores leverage 3D stacking capability, which allows CrossBar to enhance storage capacity significantly, reaching up to 1TB NV-DIMM configurations with superior read performance and power efficiency. This makes them highly advantageous for large-scale data operations requiring rapid access times and robust storage solutions. CrossBar's technology is versatile and supports various advanced semiconductor processes, enabling customization and architectural flexibility to meet specific application needs. These cores not only bolster performance and reduce power consumption but also support secure PUF key deployment for applications where data security is of paramount importance. The versatility and advanced features of these cores are crafted to empower the next generation of data storage solutions.
Designed for CompactFlash (CF) and Parallel ATA (PATA) interfaces, the F9 CF PATA Flash Controller ensures optimal data storage and retrieval in industrial-grade applications. This controller is known for its robust performance and ability to withstand extreme conditions, making it ideal for environments where reliability is paramount. The F9 controller incorporates advanced data protection features, including power fail safety and error correction mechanisms, ensuring data integrity and device longevity. Its compatibility with CF and IDE SSDs enhances its versatility across various industrial applications.
ReRAM as FTP/OTP Memory by CrossBar provides a flexible non-volatile memory solution that caters to applications requiring secure memory functionality. This technology is an extension of CrossBar's standard ReRAM and offers two approaches to memory programmability: MTP compatible Few-Time Programmable (FTP) and One-Time Programmable (OTP) solutions. This adaptability allows for the design of memory configurations according to specific application needs, optimizing performance and cost. This IP is particularly well-suited for high-security environments where data integrity and endurance are vital. CrossBar’s ReRAM-based FTP/OTP technology can be integrated seamlessly into various semiconductor processes, delivering advantages such as reduced die area and cost without sacrificing memory endurance. It supports a broad range of applications, from automotive to consumer electronics, providing robust memory solutions customized for the unique demands of each industry. The integration of secure Physical Unclonable Function (PUF) keys within the ReRAM memory architecture reinforces security, making it a staple for systems requiring secure key storage and cryptographic functionality. CrossBar's ReRAM memory solutions enhance the security and efficiency of embedded systems, delivering a versatile and reliable memory choice.
The Column A/D Converter for Image Sensors is an essential element within the digital imaging pipeline, facilitating the conversion of analog signals from image sensors into digital data that can be processed effectively. This converter is particularly tailored for use within CMOS image sensor architectures, offering precise and rapid conversion capabilities crucial for high-quality image capture. It supports multiple A/D conversion methods, including Single Slope and Warp Walk algorithms, which are optimized for both fast conversion rates and high-resolution outputs. This ensures that the converter can handle varying levels of image complexity with ease, providing high fidelity in low-light conditions and maintaining excellent dynamic range. Ideal for use in digital cameras, smartphones, and industrial imaging systems, this A/D converter efficiently manages noise levels and enhances signal clarity. Its design focuses on conserving energy without sacrificing conversion accuracy, making it a desirable choice for applications where power efficiency and compact design are paramount. The converter's sophisticated techniques ensure consistent image quality, reinforcing its role as a cornerstone component in cutting-edge digital imaging solutions.
Nexperia's SiC Schottky Diode is engineered for high-efficiency power conversion and rectification tasks. It leverages silicon carbide material to achieve lower forward voltage drop and reduced power losses, making it a preferred choice for power converters and inverters. This diode's capability to operate at higher junction temperatures enhances its reliability in demanding industrial and automotive applications. One of the defining characteristics of the SiC Schottky Diode is its enhanced switching speed, which minimizes power loss and improves overall efficiency. This attribute not only aids in energy savings but also supports the compact design of modern electronic systems by enabling smaller passive components. Suited for applications like power factor correction (PFC) and photovoltaic inverters, this diode plays a crucial role in enhancing the performance of electronic systems where efficiency and thermal management are paramount. Its robust design ensures long-term operational stability, even under fluctuating environmental conditions.
Nexperia's SiC Schottky Diode is engineered for high-efficiency power conversion and rectification tasks. It leverages silicon carbide material to achieve lower forward voltage drop and reduced power losses, making it a preferred choice for power converters and inverters. This diode's capability to operate at higher junction temperatures enhances its reliability in demanding industrial and automotive applications. One of the defining characteristics of the SiC Schottky Diode is its enhanced switching speed, which minimizes power loss and improves overall efficiency. This attribute not only aids in energy savings but also supports the compact design of modern electronic systems by enabling smaller passive components. Suited for applications like power factor correction (PFC) and photovoltaic inverters, this diode plays a crucial role in enhancing the performance of electronic systems where efficiency and thermal management are paramount. Its robust design ensures long-term operational stability, even under fluctuating environmental conditions.
The LPDDR4X PHY is designed to facilitate improved data transfer between a variety of devices, including AI coprocessors and memory solutions. It leverages JEDEC standards to provide a high-speed, low-power interface and can be integrated with DRAM, SRAM, and emerging memory technologies. Primarily developed for TSMC's 7nm process, the design promises robust performance and scalability across different manufacturing technologies.
Designed for mission-critical and rugged applications, the Rad-Hard eFPGA from QuickLogic is customized to ensure reliability under demanding conditions. Targeting sectors like aerospace and defense, this technology supports operations in extreme environments, addressing the unique challenges associated with size, weight, power, and cost constraints. By incorporating radiation-hardened features, this eFPGA offers an added layer of security and functional assurance vital for critical infrastructure.
This High Bandwidth Memory (HBM) IP supports data rates up to 12Gbps across all operating conditions. Designed with TSMC's N3P process technology, it uses CoWoS®-R advanced packaging technology to achieve exceptional signals and power integrity. Compared to previous iterations like HBM3, this HBM4 variant provides 2.5x the bandwidth while enhancing power and area efficiency by 1.5x and 2x, respectively. It integrates interconnect monitoring solutions for better testing and in-field reliability, making it a robust choice for AI, HPC, and networking application demands.
The U8 Flash Memory Controller is aimed at users requiring reliable and high-performance management of NAND flash storage across various interfaces. The U8 controller is adept at handling USB and other common interfaces, ensuring data integrity and longevity with its sophisticated flash management technologies. Enhanced by features such as error correction, wear leveling, and robust data refresh strategies, it is well-suited for applications demanding dependable and efficient storage solutions. The U8 controller meets the challenges of industrial environments head-on, providing a dependable solution for data storage needs.
The IPM-LDPC core forms a part of IP Maker's suite for enhancing data integrity in NAND Flash-based storage systems by leveraging Low-Density Parity-Check (LDPC) codes. With NAND Flash memories facing wear and reduced lifecycle due to frequent write operations, LDPC serves to stabilize these memories by embedding advanced error correction capabilities. Designed to integrate seamlessly into FPGA and SoC environments, the IPM-LDPC is highly configurable to align with specific performance and latency requirements. It accommodates adaptable BER levels and supports extensive customization for its matrix generator, covering a broad range of use-cases and ensuring optimum data path configurations. The IPM-LDPC encapsulates full hardware implementation, minimizing latency and maximizing performance throughput. By supporting various packet sizes and offering enhanced check-point management, it is integral for systems requiring high reliability and efficient error correction. Validated comprehensively, this IP helps reduce time-to-market challenges for storage solutions, ensuring accurate data correction across diverse industry applications.
Description The SPD5 Hub Function IP has been developed to interface I3C/I2C Host Bus and it allows an isolation of local devices like Temperature Sensor(TS), from master host bus. This SPD5 has Two wire serial interface like SCL, SDA. Features • Compliance as per JEDEC’s JESD300-5 • Upto 12.5MHz speed supported • Bus Reset • SDA arbitration • Parity Check is enabled • Packet Error Check is supported (PEC) • Supported Switch from I2C to I3C Basic Mode and vice versa • Default Read address pointer Mode supported • Support SPD5 Hub write and read operations with or without PEC enabled • In-band Interrupt (IBI) • Support Write Protection for each block of NVM memory
The SATA Controller Core is designed to interface with SATA devices such as HDDs and SSDs without requiring an external PHY chip. This SATA3 interface supports multiple devices, enabling RAID configurations for improved storage reliability and performance. By offering a Serial ATA 3.0 compliant interface, the core allows high-speed data transfers and efficient storage management, making it an ideal choice for applications that demand robust data throughput and reliability.
KNiulink provides DDR IP solutions that cater to the high-performance needs of modern computing systems. With an advanced architecture, KNiulink's DDR IP delivers robust performance while maintaining low power consumption. The solutions available encompass a range of standards, including DDR3, DDR4, and DDR5, as well as low-power variants such as LPDDR2, LPDDR3, LPDDR4/4x, and LPDDR5. These solutions are ideal for applications requiring high data throughput and low latency, ensuring reliable memory management within various electronic systems.
SLL's Modular PHY Type 01 Suite is a PVT aware, foundry and process agnostic, PHY for use with most single-ended LVCMOS protocols up to 400 MHz DDR. The PHY has a highly modular architecture that supports x1, x4, x8, and x16 data paths. Its has process-voltage-temperature (PVT) controls that are suitable for use in hard realtime systems (zero timing interference on PVT adjustments). The PHY includes a full standard cell library abstraction. The PHY also offers >1000 configurable options at compile time, enabling coarse grain capabilities such as pin-level deskew to be enabled/disabled, along with precise fine-grain control of mapping of RTL to gates through various data paths. It supports a range of protocols such as SPI, QSPI, xSPI, eMMC, .. and allows run-time configuration via an APB3 control port. It is designed to support easy place-and-route in a broad range of customer designs.
SLL’s unified xSPI Memory Controller (xSPI MBMC) supports all the major JEDEC xSPI and xSPI-like protocols, including: - JEDEC xSPI Profile 1.0 and 2.0 - HyperBus 1.0, 2.0 and 3.0 - OctaBus, Octal Bus; and - Xccela Bus. SLL's xSPI Memory Controller core has been physically qualified for use with all the major memory device variants: - AP Memory (x8 Xccela PSRAM, x4/x8/x16 IoT memory) - Everspin (xSPI Profile 1.0 STT-MRAM) - GigaDevice (xSPI Profile 1.0 NOR Flash) - Infineon (HyperRAM 2.0, HyperRAM 3.0, xSPI Profile 1.0 SemperFlash, xSPI Profile 2.0 SemperFlash) - ISSI (Octal RAM, Octal Flash) - Macronix (OctaFlash) - Micron (Xccela Flash) - Winbond (HyperRAM 2.0, HyperRAM 3.0) - SLL can also add support on request for: - Micron Serial NAND (8D-8D-8D DS) - Winbond Serial NAND (8D-8D-8D DS) - Winbond Octal NOR Flash (8D-8D-8D DS) SLL’s has officially partnered with all the above memory vendors. SLL’s xSPI Controller also has been extensively tested using an end-to-end test bench that achieve near 100% code coverage. -- JEDEC xSPI and xSPI-like memories offer good performance with lower hardware and power costs. Memory device variants offer up to up to 128 Mbit STT-MRAM, 512 Mbit PSRAM, up to 2 Gigabit NOR Flash, up to 4 Gigabit NAND Flash, up to 333 MHz DDR clock speeds, with x4, x8 and x16 data path widths, and a wide range of package options including 4mm x 4mm BGA49 and tiny WLCSP footprints. Some PRSAM devices are now also available with internal ECC. SLL’s small xSPI Memory Controller core enables you to easily evaluate, select and adopt the benefits of the latest xSPI-style memories in your projects and products. SLL provides world class pre-sales and post-sales technical support for all the major memory vendors and FPGA vendors, helping you navigate the rapidly evolving market, on the platform of your choice. SLL also offers a high performance PVT-aware xSPI PHY along with an integration support package for ASIC customers seeking to support their specific {Foundry, Process Node} of choice. Get to market faster, with lower power consumption, lower pin count, lower cost, and far lower project risk by using SLL’s memory controller in your project/s.
The F9 CF PATA NAND Flash Controller excels in managing NAND flash storage for CompactFlash and PATA interfaces. It supports high data integrity and endurance, crucial for industrial applications where demanding conditions are the norm. Incorporating advanced flash management technologies, it offers robust error correction and wear leveling features, vital for maintaining long-term data reliability. This controller is integral to systems that require stable, long-lasting storage solutions in challenging environmental conditions.
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