CrossBar's ReRAM Memory is designed to redefine data storage with its high-density and energy-efficient characteristics. The memory solution can achieve terabyte-scale storage on-chip, significantly surpassing traditional flash memory solutions in both speed and power consumption. Offered in a 3D cross-point architecture, it is capable of providing high performance with minimal layout overhead.
Engineered for next-generation applications, this ReRAM technology boasts a performance edge with 20ns read times and 12µs write capabilities, eliminating the usual erase latency. It is significantly faster than traditional NAND flash with its lightning-fast read and write speeds, making it suitable for real-time processing required by cutting-edge applications such as AI and IoT.
Security is a key feature, offering tamper-resistant provisions for cryptographic key storage ensuring robust protection against data breaches. The memory solution leverages advanced technology to deliver energy savings of up to 5x compared to eFlash, and up to 40x when compared to BLE, positioning it as an ideal choice for mobile and low-power applications.
