Spin-transfer Torque MRAM (STT-MRAM) by Everspin harnesses the manipulation of electron spins to create high-efficiency memory solutions. Providing significant energy savings over traditional MRAM models, STT-MRAM offers scalability for high-density applications. It features a perpendicular magnetic tunnel junction which ensures data retention and high endurance, suitable for industrial IoT and enterprise storage uses. The advanced ST-DDR4 interface of STT-MRAM aligns with DDR4 protocols, enhancing its usability in demanding data workloads and environments.
