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Attopsemi Technology Co., Ltd.

Attopsemi Technology Co., Ltd., a prominent player in the semiconductor industry, specializes in innovative one-time programmable (OTP) memory solutions. At the heart of their offerings is the revolutionary I-fuse® technology, which is a patented and silicon-proven OTP memory IP. Unlike traditional antifuse solutions, I-fuse® does not rely on explosive or large voltage requirements, making it a more reliable and efficient alternative for various applications, including automotive, industrial, and medical sectors. The I-fuse® technology boasts a non-explosive design that leverages standard logic process design without requiring additional masks or special processing steps. It ensures compatibility with a wide range of process nodes from 0.7µm to 22nm, offering extreme compactness, high reliability, and low power consumption. Their technology fully supports the AEC-Q100 Grade 0 qualification, making it ideal for advanced automotive uses where safety and reliability are paramount. Attopsemi's memory solutions provide significant advantages over conventional OTP technologies, primarily due to their robust design that increases flexibility and reduces costs. With over 90 patents to its name, Attopsemi has positioned itself as a leader in providing tailored memory solutions that meet the most stringent requirements of modern electronic devices, ensuring both high performance and cost-efficiency. Read more

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8
IPs available

I-fuse

I-fuse® technology leads the way in non-volatile memory with a non-explosive programming method that avoids thermal disruptions commonly associated with other memory systems. It reduces the footprint by a factor of ten compared to eFuse and can be implemented without extra masks or process steps across multiple foundries. With low programming voltage capabilities (1.1V/1.8V) and high data security features, it provides reliability tested up to 300°C, making it suitable for harsh environmental conditions, especially in automotive applications.

Attopsemi Technology Co., Ltd.
TSMC
10nm, 130nm
Embedded Memories, Flash Controller, SRAM Controller, Standard cell
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I-fuse Replaser

Designed to replace traditional laser fuses, I-fuse® Replaser provides comprehensive benefits in terms of programming and operational reliability. Its operation is characterized by low power requirements for both programming and reading, coupled with rapid response time, ensuring it meets rigorous industry standards like the AEC-Q100 Grade 0. It functions well in environments spanning -40°C to 150°C, further broadening its applicability in tough conditions. With attributes like low program/read voltage and soft programming features for pre-testing, it enables flexible integration into designs requiring efficient space use.

Attopsemi Technology Co., Ltd.
TSMC
28nm, 250nm
Embedded Memories, Flash Controller, SRAM Controller, Standard cell
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I-fuse S3

The I-fuse® S3 further innovates on the core I-fuse platform with an architecture that allows for significant scaling and compacting capabilities. It shines when the memory density required is below 4Kbits, offering a top-notch solution for minimal size applications. Engineered to be compatible with several foundries without needing additional processing steps, it maintains its low programming voltage and silicon-proven reliability, achieving AEC-Q100 Grade 0. Its ability to adapt to various foundries and process nodes ensures a broad applicability, from consumer electronics to automotive systems.

Attopsemi Technology Co., Ltd.
TSMC
8nm LPP, 28nm
Embedded Memories, Flash Controller, SRAM Controller, Standard cell
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OTP IP

Attopsemi's OTP IP is designed to be a high-performance, reliable solution for embedded memory, tackling the needs of modern electronic designs with high reliability and minimal footprint requirements. The technology integrates seamlessly into a wide range of devices, from consumer electronics to sophisticated automotive applications, supporting extensive testability and delivering high-speed operations. Its architecture is frequently updated to meet evolving standards, ensuring robust protection against environmental stresses and extending product life spans.

Attopsemi Technology Co., Ltd.
Tower, TSMC
16nm, 500nm
Embedded Memories, Flash Controller, SRAM Controller
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ATO0004KX9GF012LPP8ZA Memory

Designed for applications where extended memory is essential, the ATO0004KX9GF012LPP8ZA Memory provides expansive storage capabilities with a reliable structure. It caters to high-speed and high-reliability requirements, enhancing the general performance of integrated circuits even under demanding operational conditions. With a high bit density and consistent low voltage operation, it ensures optimal functionality across varied use cases, proving its worth in high-demand semiconductor environments.

Attopsemi Technology Co., Ltd.
TSMC
12nm FinFET
Embedded Memories
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ATO00512X8TS012FFC8EA Memory

The ATO00512X8TS012FFC8EA Memory is a OTP solution that offers a highly dense memory array, suitable for applications demanding high performance with compact space requirements. Operating over a range of standard voltages, it demonstrates high reliability and consistent performance across multiple duty cycles. Compatibility with low supply voltages while maintaining a 0.8V/1.8V operational range allows for integration into energy-sensitive electronic devices, assuring sustained functionality in diverse environments.

Attopsemi Technology Co., Ltd.
TSMC
10nm
Embedded Memories
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ATO256X8T22ULP6AA Memory

The ATO256X8T22ULP6AA Memory delivers efficient data storage and exceptional processing capabilities essential for high-performance applications. Its design highlights the combination of low power usage with high operational speed, positioning it as an effective choice for energy-conscious environments that demand fast data access and storage reliability. Enhanced by Attopsemi’s advanced technologies, this memory type supports seamless integration into both existing and new electronic designs facing high throughput demands.

Attopsemi Technology Co., Ltd.
TSMC
32nm
Embedded Memories
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AT64X1G22GN0AA Memory

A compact memory solution, the AT64X1G22GN0AA Memory stands out for its minimal size yet considerable memory capacity. Operating effectively on low voltage, it balances space efficiency with substantial data processing capabilities, making it essential for modern electronic systems that prioritize form factor without sacrificing performance. This solution is tailored for systems where space savings are critical, and it comes with Attopsemi's hallmark of reliability and process flexibility.

Attopsemi Technology Co., Ltd.
TSMC
22nm
Embedded Memories
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