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The xSPI MRAM product family from Everspin is crafted for Industrial IoT and embedded systems, using their proprietary STT MRAM technology. These devices adapt the Expanded Serial Peripheral Interface standard, offering high-speed, low pin count communication with a frequency up to 200 MHz. Operating on a single 1.8V supply, xSPI MRAMs deliver a throughput up to 400MBps, perfect for applications replacing legacy SRAMs, NVSRAMs, or NOR Flash. This range targets diverse sectors including automotive, gaming, and industrial automation.
The Parallel Interface MRAM from Everspin is designed to be SRAM compatible while ensuring non-volatility. Available in configurations supporting both 8-bit and 16-bit parallel interfaces, these MRAMs are tailored to provide high-speed access times of 35 to 45 nanoseconds and unlimited endurance. A protective mechanism prevents unintentional write operations under low power situations, ensuring data reliability over its extended 20-year lifespan. This makes them ideal for applications requiring dependable data retention and quick access.
Spin-transfer Torque MRAM (STT-MRAM) by Everspin harnesses the manipulation of electron spins to create high-efficiency memory solutions. Providing significant energy savings over traditional MRAM models, STT-MRAM offers scalability for high-density applications. It features a perpendicular magnetic tunnel junction which ensures data retention and high endurance, suitable for industrial IoT and enterprise storage uses. The advanced ST-DDR4 interface of STT-MRAM aligns with DDR4 protocols, enhancing its usability in demanding data workloads and environments.
Everspin's radiation-resistant MRAM is designed for environments with higher radiation levels such as space applications. This MRAM variant employs advanced magnetic tunnel junctions (MTJs) to provide data resilience against cosmic interference, ensuring reliable performance in space conditions. Everspin stands out by holding extensive test data demonstrating zero hard errors at high-radiation thresholds. These MRAMs are well-suited for aerospace applications where data integrity and retention are critical under adverse conditions.
Toggle MRAM leverages a patented cell design featuring a one transistor and one magnetic tunnel junction (MTJ) memory cell. This configuration allows for robust data retention of over 20 years, with high reliability due to its ability to maintain non-volatility during power off conditions. The MTJ structure consists of a fixed magnetic layer, a tunnel barrier, and a free magnetic layer that influences electron spin tunneling, providing a dependable resistance-based read/write mechanism. Toggle MRAM merges SRAM's speed and Flash's non-volatility, delivering an 'instant-on' capability crucial for modern electronics.
Everspin's Serial Peripheral Interface MRAMs provide an efficient solution for applications where high-speed data retrieval and storage are necessary but with a minimal pin count. These MRAMs support SPI configurations, including a Quad SPI variant that achieves faster read and write speeds of up to 52MB per second. They are ideally suited for next-gen RAID controllers, storage device buffers, and embedded system applications, providing a small footprint with their 16-pin SOIC packaging. This series offers fast, persistent memory for data-critical environments.
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