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The GS66516T stands out as a high-performance GaN Transistor, optimized for applications requiring high-speed switching and efficient thermal management. Ideal for demanding environments such as power generation and renewable energies, this transistor ensures reduced switching losses through its innovative semiconductor structure. Operating with a 25 mΩ RDS(on) and 14.2 nC QG, the GS66516T adapts to the needs of advanced power electronics systems, pushing efficiency boundaries while minimizing energy loss. Its top-side cooling design further enhances its deployment in compact and high-performance devices imposing stringent thermal requirements, making it invaluable in sophisticated electronics and power systems that prioritize energy efficiency and reliability.
The GS66508T GaN Transistor is designed for applications needing high performance and efficiency, such as advanced power supplies and high-frequency inverters. Featuring a robust top-side cooling methodology, this GaN transistor provides enhanced thermal dissipation, driving efficiency even in compact designs. It offers a revolutionized semiconductor architecture with a 50 mΩ RDS(on) and a charge of 6.1 nC, ideal for achieving low power loss and better performance in power-sensitive applications. This makes it particularly effective for consumer electronics and industrial systems where space and power efficiency are critical concerns.
The GS66516B High Current GaN Transistor offers substantial benefits for high power applications due to its low RDS(on) and high current-carrying capabilities. This component is designed for power-intensive applications like electric vehicles and industrial motors, which demand efficient energy conversion and thermal management. The transistor excels in minimizing conduction losses and enhancing performance reliability through its unique use of GaN technology. It achieves this by maintaining a low 25 mΩ RDS(on) and an output charge (QG) of 14.2 nC, tailored for high-efficiency systems requiring robust thermal control and power integrity. This transistor can operate efficiently across a wide range of thermal and electrical stress points, making it an excellent choice for challenging power environments.
The GS66508B GaN Transistor is engineered to provide exceptional thermal management and performance reliability in demanding applications. Utilizing GaN technology, this transistor offers a unique combination of low conduction and switching losses, significantly enhancing overall system efficiency. It is particularly well-suited for high-density power systems where thermal performance is critical, making it ideal for applications such as power conversion in data centers, automotive power systems, and renewable energy installations. With features such as a 50 mΩ RDS(on) and an output charge (QG) of 6.1 nC, the GS66508B ensures minimal power loss and heightened efficiency.
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