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0.75V ESD power protection. The ESD clamp is designed to provide protection for 0.75 V Analog and Core domain using 0.75V FinFet transistors in TSMC N3E process. The target ESD robustness can be selected.
Sofics has verified its ESD protection clamps on technology nodes between 0.25um CMOS down to 3nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 5000 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable low-leakage, high-speed or high voltage tolerant interfaces. The Analog I/O clamp described in this document can be used for 3.3V pads in the TSMC 7nm FinFET technology. The ESD clamp is designed to provide 2kV HBM protection for 3.3V interfaces. It features a small silicon footprint.
Sofics has verified its TakeCharge ESD protection clamps on technology nodes between 0.25um CMOS down to 3nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 5000 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable low-leakage, high-speed or high voltage tolerant interfaces. The ESD protection described in this document can be used for 1.6V chiplet (die-2-die) interface pads in the GF 22nm FDX technology. The ESD robustness is strongly reduced in order to reduce the size and capacitance.
Sofics has verified its ESD protection clamps on technology nodes between 0.25um CMOS down to 3nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 5000 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable low-leakage, high-speed or high voltage tolerant interfaces. The Analog I/O clamp described in this document can be used for 3.3V pads in the TSMC 3nm FinFET technology. The ESD clamp is designed to provide 2kV HBM protection for 3.3V interfaces. It features a small silicon footprint.
Sofics has verified its ESD protection clamps on technology nodes between 0.25um CMOS down to 3nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 5000 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable low-leakage, high-speed or high voltage tolerant interfaces. The Analog I/O clamp described in this document can be used for 2.5V pads in the TSMC 5nm FinFET technology. The ESD clamp is designed to provide 2kV HBM protection for 2.5V interfaces. It features a small silicon footprint.
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