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The memBrain™ neuromorphic memory product by SST is a groundbreaking solution tailored for artificial intelligence applications, particularly at the network edge. As AI tasks migrate from cloud-based servers to battery-operated, embedded devices, there is a growing need for efficient memory solutions to handle complex AI operations like video and voice recognition.\n\nmemBrain leverages the principles of deep neural networks (DNNs) by storing necessary weights in local storage through its analog compute-in-memory approach. This method allows for vast multiplication-accumulate operations to occur efficiently within the memory cell itself, alleviating traditional digital processors' limitations. As a result, memBrain significantly reduces system latency by minimizing off-chip DRAM interaction, concurrently achieving a notable power reduction compared to traditional DSP-based solutions.\n\nIncorporating memBrain into devices provides numerous economic and performance advantages. It reduces both the bill of materials cost and the power consumption, offering up to 20 times the power efficiency of previous digital methods. This neuromorphic memory is particularly apt for AI edge applications where low latency and high efficiency are paramount, exemplifying SST's forefront position in embedded memory technologies.
SuperFlash® technology is a market-leading NOR Flash memory solution renowned for its high performance and reliability. Based on a proprietary split-gate Flash memory cell, this technology provides a cost-effective and high-performance programmable System-on-Chip (SoC) solution. Since its inception in 1992, SuperFlash technology has maintained its core structure and operating conditions through its simple array architecture, ensuring consistent operation across a wide range of applications.\n\nA key advantage of SuperFlash technology is its compatibility with standard silicon CMOS processes, offering low-power consumption and exceptional performance. Its design simplicity and scalability allow it to extend from 1µm technology nodes down to advanced 110nm nodes. It features high endurance for write-erase cycles and excellent data retention, bolstered by a low failure rate even in high-temperature environments.\n\nSuperFlash technology is tailored to meet the demands of various market segments, including automotive and industrial applications, where it provides robustness and reliability. Its immunity to Stress-induced Leakage Current (SILC) further enhances its durability, making it an ideal choice for devices requiring extended longevity and consistent performance under stress.
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